Volume 12, Num 3 article 35
Spectral Domain Approach Of Multilayered
Superconducting Microstrip Line Using a New Set of
Edge-Conditioned Basis Functions
F. Z. Siaba, M. L. Riabi, M. T. Benhabiles
A new set of edge-conditioned basis functions is used to
determine the dispersion properties of microstrip line.
Since An alternative formulation of the spectral domain
approach (SDA) method presented for high-temperature
superconducting microstrip line Green’s function derivation.
The method relies on reflection factor rather than the
transverse impedance used in the immittance approach. The
inner products is involved in the Galerkin procedure are
pole-free. The numerical examples are presented and close
agreement is obtained between simulated and published data.
Full Text
Keyword:
Spectral domain approach, Galerkin procedure, Raised Cosine,
high-temperature superconducting.
Département d’Electronique, Université Mentouri, Constantine
25000, algeria
E-mail: si_fati @yahoo.fr
_________________________
Volume 12, Num 3 article 36
Investigation Of Pores Influence on Dielectric
Constant Value in Low k Materials Using Monte Carlo Method
Leila Bouledjnib and Salah Sahli
This paper investigates the pores influence on dielectric
constant of low-k materials. Cylindrical, hexagonal and
cubic pores shapes have been investigated using Monte-Carlo
Method. Mixture composed of matrix and cylindrical pores
presents the low dielectric constant with minimum of
porosity. Moreover, new formula concerning volume scale
transformation is proposed for making the usual mixing rules
based on two phases more useful to predict the dielectric
constant value in mixture composed for different pores
shapes. To assess the performance of this new approach,
Lichtenecker and Volume Average Theory mixing rules have
been used through classical models and applying volume scale
transformation. The obtained results show the success of
volume scale transformation method. The proposed technique
may have the potential in analyzing other properties such as
electrical conductivity and thermal conductivity in porous
ultra low-k dielectrics.
Full Text
Keyword:
Low k, Pores Shape, Mixing Rules, Monte-Carlo Method.
Université Mentouri de Constantine, Laboratoire de
Microsystèmes et Instrumentation (LMI), Faculté des Sciences
de l'Ingénieur, Constantine, Algeria
Email: leilatyy@hotmail.com.
_________________________
Volume 12, Num 3 article 37
Generation-Recombination noise analysis in ungated
HEMT structure to determinate the activation energy and
capture cross-section of traps
S. Mouetsi1,2,*, A. El Hdiy2,
M. Bouchemat1
Low frequency noise of ungated GaAs/AlGaAs two-dimensional
electron gas (2 DEG) heterostructure grown by molecular beam
epitaxy (MBE) was investigated over a wide range of
temperatures from 4 K to 300 K. In the frequency range from
1 Hz to 100 KHz, noise power spectral densities (PSD) can be
described as superposition of flicker noise, thermal noise
and several generation-recombination (G-R) noise components.
The temperature dependence of the (G-R) noise arising from
the traps was used to deduce the thermal activation energies
and cross sections. The present results are compared to
those of the literature to identify the physico-chemical
nature of traps responsible of the G-R noise.
Full Text
Keyword:
GaAs/AlGaAs, 2DEG, low frequency noise, G-R noise,
activation energy, cross section, traps.
1 Laboratoire de Microsystème et Instrumentation (LMI),
Université Mentouri, Constantine. Algeria.
2 Laboratoire de Microscopies et d’Etude de Nanostructures
(EA 3799), Université de Reims, Champagne-Ardenne, 51687
Reims Cedex 2, France.
*E-mail: souheil25m@yahoo.fr
_________________________
Volume 12, Num 3 article 38
Electrical and structural characterisation of
plasma-polymerized TEOS thin films as humidity sensors
N. Guermat1,a,
A. Bellel1, S. Sahli2, Y. Segui3
and P. Raynaud3
In this study, we used plasma polymerization of TEOS to
deposit thin water molecule sensitive layers on two
intredigitated aluminum electrodes evaporated on glass
substrate. Electrical and structural analyses of the
deposited sensitive layers have been evaluated through
current-impedance responses and FTIR spectroscopy. The
elaborated humidity resistive sensor exhibited a detectable
response to relative humidity (RH) percentages ranging from
20 to 95%. The films showed good sensitivity to water
molecule due to the presence of hydroxyl groups OH. These
groups provide the adsorption sites for water and play an
important role to the humidity sensor properties. The low
impedance, good sensitivity as characterized by a linear
change in impedance from 106 to 103 Ω over RH interval of
20–80% and low observed hysteresis of about 4%, make the
elaborated layer a promising candidate for humidity sensors
development.
Full Text
1 Laboratoire des Etudes de Matériaux d’Electronique
pour Applications Médicales (LEMEAMED), Faculté des Sciences
de l’Ingénieur,
Université Mentouri de Constantine 25000
Algeria
2 Laboratoire de Microsystèmes et Instrumentation (LMI),
Faculté des Science de l’Ingénieur, Université Mentouri de
Constantine 25000, Algeria
3 Laboratoire Plasma et Conversion d’Energie (LAPLACE),
Université Paul Sabatier, 118 route de Narbonne - 31062
Toulouse – France
a Email: g_noubeil@yahoo.fr
_________________________
Volume 12, Num 3 article 39
Modelling and Optimization of GaAs used in
mechanically stacked solar cells
M. Khalis1, A. Amine1, Y. Mir,
M. Zazoui1,*, J. Hemine1, A. Nafidi2
Different approaches have been made in order to reach higher
efficiencies. Concepts for multilayer solar cells have been
developed. This can be realised if multiple individual
single junction solar cells with different, suitably chosen
band gaps are connected in series in multi-junction solar
cells.
In our work, we have simulated and optimized solar cells
based on the system mechanically stacked using computer
modelling and predict their maximum performance. The
structures of solar cells are based on the single junction
Si, Ge and GaAs cells. We have simulated each cell
individually and extracted their optimal parameters
(thickness, concentration, the recombination velocity…..),
also, we calculated the efficiency of each cells optimized
by separation of the solar spectrum in bands where the cell
is sensible for the absorption. The optimal values of
physical parameters giving the best current of short-circuit
and voltages of open circuit as well high conversion
efficiency have obtained for the two solar materials and
tandem.
Full Text
1 Laboratory of Condensed Matter Physics, Faculty of
Sciences and Techniques Mohammedia, University of Hassan II-Mohammedia,
B.P. 146, Bd. Hassan II- Mohammedia, Morocco.
2 Condensed Matter Physics Group, Faculty of Sciences-Agadir,
University of Ibn Zohr, B.P. 32/S, Agadir, Morocco.
* Corresponding author: zazouimimoun@yahoo.fr
_________________________
Volume 12, Num 3 article 40
Surface Potential Decay of Low Density Polyethylene
(LDPE) Films under Different Corona Discharge Conditions
Zehira Ziari and Salah Sahli1,*, Azzedine
Bellel2
The surface potential decay on low-density polyethylene
(LDPE) has been studied after negative charge deposition by
corona effect as a function of initial potential Vo and
charging time tc. It was found that the decay rate increases
with initial potential and charging time. For high charging
level, cross over phenomenon has been observed. Surface
potential profile has been recorded with two different
charging levels. The surface potential profile indicates the
absence of lateral migration of charges along the free
surface of the LDPE film and the presence of the hollow for
high initial potential, which makes the bulk conduction
mechanisms caused by charge injection into the LDPE film
bulk, responsible for the observed surface potential decay.
Full Text
Keyword:
Corona charging, Injection, LDPE, Surface potential decay.
1 Université Mentouri de Constantine, Laboratoire de
Microsystèmes et Instrumentation (LMI), Faculté des Sciences
de l'Ingénieur, Constantine, Algeria
2 Université Mentouri de Constantine, Laboratoire d’Etude
des Matériaux Electroniques pour Applications Médicales
(LEMEAMED), Faculté des Sciences de l'Ingénieur,
Constantine, Algeria
* Email: zziari_zahira@yahoo.fr
_________________________
Volume 12, Num 3 article 41
Mobility Dependence on Electric Field in Low Density
Polyethylene (LDPE)
Zehira Ziari1,*, Salah Sahli1
and Azzedine Bellel2
The surface potential decay evolutions with time after
negative corona discharge of low-density polyethylene (LDPE)
have been recorded for different charging levels. It was
observed that there was a significant increase in the
surface potential decay rate with the increase of charging
levels. Electrical conduction characteristics in LDPE have
been investigated as a function of electric fields strength.
It is found that the mobility of LDPE increases with the
increase of electric field and the conduction mechanism is
governed by the hopping process of injected carriers between
localized trapping centers. A deep trap separation of 3.2
nm, corresponding to 3.1019 traps/cm3 has been found.
Full Text
Keyword:
Carrier mobility, Charge transport, Conduction mechanism,
Hopping conduction, Poole-Frenkel mechanism.
1 Université Mentouri de Constantine, Laboratoire de
Microsystèmes et Instrumentation (LMI), Faculté des Sciences
de l'Ingénieur, Constantine, Algeria
2 Université Mentouri de Constantine, Laboratoire d’Etude
des Matériaux Electroniques pour Applications Médicales
(LEMEAMED), Faculté des Sciences de l'Ingénieur,
Constantine, Algeria
* Email: zziari_zahira@yahoo.fr
_________________________
Volume 12, Num 3 article 42
RF Power Effect On Structural Characteristics Of
Amorphous Carbon Nitride Thin Films Deposited By Reactive
Radiofrequency Sputtering
A. Essafti1,*, J.L.G. Fierro2,
E. Ech-chamikh
Amorphous carbon nitride thin films were deposited, at room
temperature, on silicon substrates by reactive
radiofrequency (RF) sputtering from a graphite target in an
atmosphere of nitrogen. The structural properties were
investigated by Raman spectroscopy. This spectroscopy
reveals the presence of C–C, C=C, C=N and C≡N bonding types.
The Raman intensity (ID/IG) ratio of disorder and graphitic
bands increased from 1.29 to 2.67 with increasing the RF
power from 100 to 400W indicating an increase of structural
disorder.
Full Text
Keyword:
amorphous carbon nitride, thin films, reactive
radiofrequency sputtering, Raman spectroscopy, structural
disorder.
1 Laboratoire de Physique des Solides et des Couches
Minces, Département de Physique, Faculté des Sciences –
Semlalia –, Université Cadi Ayyad,
B.P. 2390, 40000 Marrakech, Morocco.
2 ICP, CSIC, Campus Universidad Autónoma de Madrid, Spain.
_________________________
Volume 12, Num 3 article 43
Electrical Properties Of Schottky Diodes Based On
Poly
(O-Toluidine) Deposited By Spincoating
A. Elmansouria, A. Malaouib,
A. Outzourhita, A. Oueriaglia, A.
Lachkarc, N. Hadika,
M. E. Achourd, A. Abouelaoualima,and
E. L. Amezianea
The poly(o-toluidine) (POT) were synthesized by chemically
oxidization. Their thin films were fabricated by spincoating
on indium-tin-oxide (ITO) coated glass substrate. A Schottky
diode with configuration ITO/POT/Al devices is fabricated.
The Current-Voltage characteristics of the devices were
non-linear indicating rectification behavior. The observed
current-voltage characteristics can be satisfactorily fitted
using the modified Shockley equation. The diode parameters
were calculated from I-V characteristics and discussed. On
the other hand, the Capacitance-Frequency and
Capacitance-Voltage characteristics are presented and
discussed.
Full Text
Keyword:
Schottky diode, electrical properties, spin-coating,
substituted polyaniline.
a Laboratoire de Physique Solide et Couches Minces,
Département de Physique, Faculté des Sciences Semlalia, BP
2390, Marrakech - Morocco.
b Laboratoire de Génie Industriel, Faculté Polydisciplinaire,
Université Sultan My Slimane, Béni Mellal - Morocco.
c Laboratoire de Spectroscopie Moléculaire, Département de
Chimie, Faculté des Sciences Semlalia, Marrakech - Morocco.
d Laboratoire d’Automatique et des Micro-ondes, Département
de physique, Faculté des Sciences, Kenitra - Morocco.
a.malaoui@ucam.ac.ma
_________________________
Volume 12, Num 3 article 44
Impact Of The Effective Conducting Path Effect
(ECPE) On The Convergence Of The Evanescent And The
Polynomial Models: Applied To The Submicronic MOSFET
A. Bouziane, A. Aouaj and A. Nouaçry
We present a comparative study of submicronic MOSFET
characteristics using analytic models of electrostatic
potential in the channel. We are particularly interested in
the surface potential, threshold voltage, swing and DIBL
using the polynomial model with and without ECPE and the
evanescent model to analytically express the electrostatic
potential. The results show a good agreement between the
polynomial model including ECPE, the evanescent model and
measures done by simulation tools.
Full Text
Keyword:
submicronic MOSFET; evanescent model; effective conducting
path effect; DIBL and Swing.
Laboratoire de physique de la matière et nanotechnologie,
Faculté des Sciences et Techniques, Université Sultan Moulay
Slimane, BP523 Beni-Mellal, CP23000, Morocco.
_________________________
Volume 12, Num 3 article 45
Investigation In The Convergence Of The Evanescent
Model And The Polynomial Model Including Effective
Conducting Path Effect (ECPE): Applied To The Submicronic SG
FD SOI MOSFET
A.Bouziane, A. Aouaj and A. Nouaçry
we are presenting a convergence study of the evanescent
model and the polynomial model with and without the
Effective Conduction Path Effect. These analytic models of
the electric potential in the channel are used to analyze
the short channel effect for the submicronic SG FD SOI
MOSFET. Hereby, we figure out the 2D Poisson equation and we
analytically write the surface potential, the threshold
voltage, the DIBL and the sub-threshold slope. The results
show a good agreement of the evanescent model and the
polynomial model including the Effective Conduction Path
Effect with measures done by simulation tools.
Full Text
Laboratoire de physique de la matière et nanotechnologie,
Faculté des Sciences et Techniques, Université Sultan Moulay
Slimane, BP523 Beni-Mellal, CP23000, Morocco.
_________________________
Volume 12, Num 3 article 46
Mixed spin Ising model with four-spin interactions
and crystal field
M. Ghliyem and N. Benayad
A mixed spin Ising model consisting of spin-1/2 and spin-1
with four-spin interactions and crystal field anisotropy is
studied by the use of the finite cluster approximation based
on a single-site cluster theory. The state equations are
derived for the square lattice. It has been shown that the
phase diagram of the system depends on the strength of
four-spin interaction and exhibits a variety of interesting
features.
Full Text
Keyword:
mixed spin, four-spin interaction, uniform crystal field.
Laboratoire de physique théorique et appliquée,
département de physique, Faculté des sciences Ain Chock, B.P
5366, Université Hassan II,
Maârif Casablanca 20100, Morocco.
_________________________
Volume 12, Num 3 article 47
Influence of the interface morphology on the
magnetization of Magnetic/Non-Magnetic (Fe/Cu) multilayers:
a Monte Carlo investigation
A. Razouk, M. Sahlaoui, M. Sajieddine
A Monte Carlo investigation was used to study the
magnetization of a Heisenberg multilayers system. Our model
consists of an alternate staking of Magnetic and
Non-Magnetic layers (M/NM) with disordered interfaces. The
results indicate that the magnetization of multilayers M/NM
depends on the atomic composition, the interface morphology
and the exchange interactions at the interface.
Full Text
PACS: 87.55.K-, 75.70.-i, 67.30.er,
67.30.hp, 75.10.Jm.
Keyword:
Monte Carlo simulation, Heisenberg model, Interface
Morphology, Multilayers, Curie temperature.
Laboratoire de Physique et Mécanique des Matériaux
Faculté des Sciences et Techniques, Université Soultan
Moulay Slimane,
BP 523, 23000 Béni-Mellal, Morocco.
_________________________
Volume 12, Num 3 article 48
Dynamic Studies Of Biphenyl Benzoate Ferroelectric
Liquid Crystals
J. Hemine1,*, A. Daoudi2,3,4,
C. Legrand2,5, A. El kaaouachi6, A.
Nafidi6, N. Isaert2,7,8, H. T. Nguyen9
We present electro-optic and dynamic properties on three
homologous of biphenyl benzoate series of ferroelectric
liquid crystals (FLCs) exhibiting the chiral smectic C phase
(SmC*). Dielectric spectroscopy was used to provide the
dynamics and dipolar ordering of the ferroelectric phase.
The Goldstone relaxation mode was studied for sample cells
on planar geometry without a DC bias voltage. The rotational
viscosity corresponding to molecular motions in the SmC*
phase was determined from electro-optic and dielectric
measurements. The Arrhenius-type behaviour of the rotational
viscosity was found and the corresponding activation
energies were evaluated.
Full Text
1 Laboratoire de Physique de la Matière Condensée,
Université Hassan II Mohammedia-Casablanca, BP 146, F.S.T.
Mohammedia, Morocco.
2 Université Lille Nord de France, F-59000 Lille, France.
3 ULCO, LDSMM, F-59140 Dunkerque, France.
4 CNRS UMR8024, F-59140 Dunkerque, France.
5 ULCO, LEMCEL, F-62228 Calais, France.
6 Laboratoire de Physique de la Matière Condensée, Faculté
des Sciences Ibnou Zohr, BP 28/S 80000 Agadir, Morocco
7 USTL, LDSMM, F-59655 Villeneuve d’Ascq, France.
8 CNRS UMR8024, F-59655 Villeneuve d’Ascq, France.
9 Centre de Recherche Paul Pascal, Université de Bordeaux 1,
33600 Pessac, France
E-mail address: hemine1@yahoo.fr
_________________________
Volume 12, Num 3 article 49
Transverse Acoustic Waves In Finite
Piezoelectric-Metal Superlattices
M. Alami1,*, E. H. El Boudouti1,
B. Djafari-Rouhani2, Y. El Hassouani1,2
In this communication, we study the propagation of
transverse acoustic waves in a finite superlattice (SL)
constituted of alternating piezoelectric and metal layers.
Our objective is to determine: i) the transmission and
reflection coefficients through a finite SL, ii) the
confined modes related to the finite size of the SL and iii)
the possibility of existence of the acoustic Brewster angle
in these systems.
Full Text
PACS:
43.20.+g , 68.35.Iv, 62.30.+d.
1 LDOM, Département de Physique, Faculté des Sciences,
Université Mohamed I, 60000 Oujda, Morocco
2 IEMN, UMR-CNRS 8520, UFR de Physique, Université de Lille
1, 59655 Villeneuve d'Ascq, France.
_________________________
Volume 12, Num 3 article 50
Numerical Modeling Of Electron’s Trajectories In
Cold
Plasma By PIC Method
F. Bouanaka, S. Rebiaï, H. Bahouh, S. Sahli
This study is a contribution to the modeling of plasma
discharges. The numerical model proposed is particle type,
applied to argon plasma generated by a continuous discharge.
A microscopic particle model is used for solving the
Boltzmann equation by considering a finite number of
particles to represent the charged species. The study of the
electrical behavior of plasma is performed using a PIC
(Particle-In-Cell) model whitch is well suited for
low-pressure no-collision plasmas. This model provides the
plasma characteristics (potential, charge densities). The
principle of the PIC method is based on sampling (mesh) in a
1D of the space of the reactor between two flat and parallel
electrodes in which particles move under the action of
electric field (applied). This method makes it possible to
determine the values of electric fields (steady state and
time) at every point of contact for any interpolation from
the numerical values obtained by the method of finite
differences.
Full Text
Keywords: Plasma,
numerical modeling, PIC (Particle-In-Cell), particulate
model, finite differences.
Laboratoire de Microsystèmes et Instrumentation (LMI),
Département d'électronique, Faculté des sciences de
L'ingénieur, Université Mentouri de Constantine, Algeria
s_rebiai@Yahoo.fr –fouzi.bouanaka@yahoo.fr
_________________________
Volume 12, Num 3 article 51
Development Of A One Dimensional Fluid Model,
Application To Electropositive And Electronegative Gases In
DC Discharge
H. Bahouh, S. Rebiaï, F. Bouanaka, S. Sahli
The objective of the work presented in this paper is to
develop a numerical calculation program which simulates the
behavior of charged species in deposition reactor by cold
plasma in DC glow discharge. After applying some simplifying
assumptions, we developed a model of fluid type in MATLAB
using the numerical method of finite differences. We applied
the model to simulate the plasma in the case of an
electropositive (He) and an electronegative (SF6) gases in
terms of spatial distribution of charged particles, electric
field and electric potential between electrodes space.
Full Text
Keywords: Fluid
model, atomic plasma, molecular plasma, finite differences,
charged particles.
Laboratoire de Microsystèmes et
Instrumentation (LMI), Département d'électronique, Faculté
des sciences de L'ingénieur, Université Mentouri de
Constantine, Algeria
s_rebiai@Yahoo.fr –fouzi.bouanaka@yahoo.fr
_________________________
Volume 12, Num 3 article 52
Coulomb Scattering Of An Electron In Strong Laser
Fields
S.Taj1, B. Manaut2,
Y.Attaourti1, S.Elhandi1 and L.Oufni3
In this work, we review and correct the first Born
differential cross section for the process of Mott
scattering of a Dirac-Volkov electron, namely, the
expression (26) derived by Szymanowski et al [Physical
Review A56, 3846 (1997)]. In particular, we disagree with
the expression of they obtained and we give the exact
coefficients multiplying the various Bessel functions
appearing in the scattering differential cross section.
Comparison of our numerical calculations with those of
Szymanowski et al. shows qualitative and quantitative
differences when the incoming total electron energy and the
electric field strength are increased particularly in the
direction of the laser propagation. Such corrections are
very important since the relativistic electronic dressing of
any Dirac-Volkov charged particle gives rise to these
coefficients that multiply the various Bessel functions and
the relativistic study of other processes (such as
excitation, ionization, etc....) depends strongly of the
correctness and reliability of the calculations for this
process of Mott Scattering in presence of a laser field. Our
work has been accepted [Y. Attaourti, B. Manaut, Physical
Review A68, 067401 (2003)] but only as a comment. In this
paper, we give the full details of the calculations as well
as the clear explanation of the large discrepancies that
their results could cause when working in the ultra
relativistic regime and using a very strong laser field
corresponding to an electric field in atomic units.
Full Text
PACS number(s):
34.80.Qb, 12.20.Ds
1 Laboratoire de Physique des Hautes Energies et
d'Astrophysique, Faculté des Sciences Semlalia, Université
Cadi Ayyad Marrakech, BP : 2390, Morocco
2 Laboratoire Interdisciplinaire de Recherche en Science et
Technique (LIRST), Faculté Polydisciplinaire Université
Sultan Moulay Slimane Béni Mellal, BP : 523, Morocco.
3 Université Sultan Moulay Slimane, Faculté des Sciences et
Techniques, Département de Physique, LPMM-ERM, BP : 523,
23000 Béni Mellal, Morocco.
E-mail: manaut@fstbm.ac.ma
_________________________
Volume 12, Num 3 article 53
Investigation Of A Circularly Polarized Laser Field
For Mott Scattering Process Of Polarized Electrons
S.Taj1, B. Manaut2,
Y.Attaourti1, S.Elhandi1 and L.Oufni3
We present a study of Mott scattering of polarized electrons
in the presence of a laser field with circular polarization
using the helicity formalism and the introduction of the
well known concept of non flip differential cross section as
well as that of flip differential cross section. The results
we have obtained in the presence of a laser field are
coherent with those obtained in the absence of a laser
field. We have compared our results with those obtained by
B. Manaut et al [5] who described the process of Mott
scattering of polarized electrons in the presence of a laser
field with linear polarization. Some differences in the
theoretical results obtained are reported.
Full Text
PACS number(s):
34.50.RK, 34.80.Qb, 12.20.Ds
1 Laboratoire de Physique des Hautes Energies et
d'Astrophysique, Faculté des Sciences Semlalia Université
Cadi Ayyad Marrakech, BP : 2390, Morocco.
2 Laboratoire Interdisciplinaire de Recherche en Science et
Technique (LIRST), Faculté Polydisciplinaire Université
Sultan Moulay Slimane Béni Mellal, BP : 523, Morocco.
3 Université Sultan Moulay Slimane, Faculté des Sciences et
Techniques, Département de Physique, LPMM-ERM, BP : 523,
23000 Béni Mellal, Morocco.
E-mail: manaut@fstbm.ac.ma
_________________________
Volume 12, Num 3 article 54
Optical Emission Spectroscopy Study Of RF Sputtered
A-C/WOX Interface
H. S. Ousmane1, T. Elasri2, E.
Ech-chamikh1,*, M. Azizan1, A. Essafti1,
Y. Ijdiyaou1 and A. Kaddouri2
Amorphous carbons on tungsten oxide (a-C/WOX) bi-layers were
deposited on silicon substrates by rf sputtering. The WOX
layers were obtained from a pure tungsten target, in a gas
mixture of argon and oxygen, whereas those of a-C were
obtained from a graphite target, in pure argon plasma. The
reactivity of the a-C/WOX interface and the ion bombardment
effects have been studied by Optical Emission Spectroscopy
(OES) technique. The OES spectra show that the a-C/WOX
interface is reactive in accordance with previous results
obtained by X-ray reflectometry. The inter-diffusion depth
is estimated to be greater than 56 nm. Emission lines of W
are still observed even after an ion bombardment time of
about 45 minutes. This result confirms the presence of the
Knock-on effect.
Full Text
Keywords: Carbon,
tungsten oxide, interface, ion bombardment, optical
spectroscopy, RF sputtering.
1 Laboratoire de Physique du Solide et des Couches
Minces, Département de physique, Faculté des Sciences
Semlalia, Université Cadi Ayyad, BP:2390, Marrakech 40000,
Morocco.
2 Équipe de Spectroscopie & Imagerie Atomiques des Matériaux,
Département de physique, Faculté des Sciences Semlalia,
Université Cadi Ayyad, BP:2390, Marrakech 40000,
Morocco.
* E-mail : ech-chamikh@ucam.ac.ma